Establishment of plasma etching condition.
Use as electrodes for RF units.
Control sidewall damage of the reactive substance, improve etching aspect ratios and optimize etching surfaces.
Improve the uniformity and yield of the edge of silicon wafer.
Outer Diameter | Within 650mm |
Crystal Orientation | Customized |
Conductive Type/Doping: | Custom |
Resistivity | Low Resistance (E.G.<0.015,<0.02...). ; |
Moderate Resistance (E.G.1-4); | |
High Resistance (E.G. 60-90); | |
Customer Customization | |
Thickness | Customized |
Other Specifications | Customized |
1. Used as electrodes in CCP/ICP etching equipment to focus and drive plasma for wafers;
2. Silicon rings can optimize etching performance/uniformity at the edge of wafers.
The Silicon Ring is used in the dry etching machine as the outside electrode or the lower electrode.